2N5551TFR

Bipolar Transistors - BJT NPN Transistor General Purpose

SKU: 3201108-L36.03
Brand: 
FAIRCHILD SEMICONDUCTOR
Price: Rp 3.000
Rp 2.000
Specifications: 
RoHS:Yes
Configuration:Single
Transistor Polarity:NPN
Collector- Base Voltage VCBO:180 V
Collector- Emitter Voltage VCEO Max:160 V
Emitter- Base Voltage VEBO:6 V
Collector-Emitter Saturation Voltage:0.2 V
Maximum DC Collector Current:0.6 A
Gain Bandwidth Product fT:300 MHz
Maximum Operating Temperature:+ 150 C
Mounting Style:Through Hole
Package / Case:TO-92-3 Kinked Lead
Brand:Fairchild Semiconductor
DC Collector/Base Gain hfe Min:80
DC Current Gain hFE Max:250
Maximum Power Dissipation:625 mW
Minimum Operating Temperature:- 55 C
DatasheetSize
2N5551TFR.pdf219.73 KB