2N2222A

The 2N2222A is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

SKU: 3201016-L13.53B
Brand: 
ST MICROELECTRONICS
Price: Rp 15.000
Rp 2.000
Specifications: 
RoHS:Yes
Brand:STMicroelectronics
Configuration:Single
Transistor Polarity:NPN
Collector- Base Voltage VCBO:60 V
Collector- Emitter Voltage VCEO Max:30 V
Emitter- Base Voltage VEBO:6 V
Maximum DC Collector Current:0.8 A
Gain Bandwidth Product fT:250 MHz
Maximum Operating Temperature:+ 150 C
Mounting Style:Through Hole
Package / Case:TO-18
Continuous Collector Current:0.6 A
DC Collector/Base Gain hfe Min:35
DC Current Gain hFE Max:300
Maximum Power Dissipation:1.8 W
Minimum Operating Temperature:- 65 C
Minimum Operating Temperature:- 55 C
DatasheetSize
CD00253894.pdf1.11 MB