2N5551G

Bipolar Transistors - BJT 600mA 180V NPN

SKU: 3201109-L36.04
Brand: 
ON SEMICONDUCTOR
Price: Rp 6.500
Rp 2.000
Specifications: 
RoHS:Yes
Brand:ON Semiconductor
Configuration:Single
Transistor Polarity:NPN
Collector- Base Voltage VCBO:180 V
Collector- Emitter Voltage VCEO Max:160 V
Emitter- Base Voltage VEBO:6 V
Collector-Emitter Saturation Voltage:0.25 V
Maximum DC Collector Current:0.6 A
Gain Bandwidth Product fT:300 MHz
Maximum Operating Temperature:+ 150 C
Mounting Style:Through Hole
Package / Case:TO-92-3 (TO-226)
DC Collector/Base Gain hfe Min:80
Maximum Power Dissipation:625 mW
Minimum Operating Temperature:- 55 C