NJW1302G

Bipolar Transistors - BJT 200W TO-3P PNP

SKU: 3201124-L43.24
Brand: 
ON SEMICONDUCTOR
Price: Rp 40.000
Rp 2.000
Specifications: 
RoHS:Yes
Mounting Style:Through Hole
Transistor Polarity:PNP
Package / Case:TO-3P
Configuration:Single
Collector- Emitter Voltage VCEO Max:250 V
Collector- Base Voltage VCBO:250 V
Emitter- Base Voltage VEBO:5 V
Maximum DC Collector Current:15 A
Gain Bandwidth Product fT:30 MHz
Maximum Operating Temperature:+ 150 C
DC Collector/Base Gain hfe Min:75
DC Current Gain hFE Max:75
Minimum Operating Temperature:- 65 C
Pd - Power Dissipation:200000 mW
DatasheetSize
NJW1302G.pdf115.16 KB