0 items Rp 0
Specifications:
| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-252-3 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 24 A |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Vgs - Gate-Source Voltage: | 20 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Configuration: | Single |
| Channel Mode: | Enhancement |
| Brand: | ON Semiconductor |
| Fall Time: | 27 ns |
| Forward Transconductance - Min: | 15 S |
| Height: | 2.38 mm |
| Length: | 6.73 mm |
| Pd - Power Dissipation: | 62.5 W |
| Rise Time: | 24 ns |
| Series: | NTD24N06 |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Width: | 6.22 mm |
| Unit Weight: | 4 g |
| Datasheet | Size |
|---|---|
 NTD24N06T4G.pdf | 116.74 KB |