0 items Rp 0
Specifications:
| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 20.7 A |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Vgs - Gate-Source Voltage: | 20 V |
| Maximum Operating Temperature: | + 150 C |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Fall Time: | 4.5 ns |
| Height: | 20.95 mm |
| Length: | 15.9 mm |
| Minimum Operating Temperature: | - 55 C |
| Pd - Power Dissipation: | 208 W |
| Rise Time: | 5 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 67 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Width: | 5.3 mm |
| Unit Weight: | 38 g |
| Datasheet | Size |
|---|---|
 SPW20N60C3.pdf | 824.32 KB |