STGF14NC60KD

IGBT Transistors PowerMESH" IGBT

SKU: 3201127-L55.06
Brand: 
ST MICROELECTRONICS
Price: Rp 35.000
Rp 2.000
Specifications: 
RoHS:Yes
Configuration:Single
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:2 V
Maximum Gate Emitter Voltage:+/- 20 V
Gate-Emitter Leakage Current:150 uA
Mounting Style:Through Hole
Package / Case:TO-220-3 FP
Maximum Operating Temperature:+ 150 C
Continuous Collector Current Ic Max:11:00 AM
Minimum Operating Temperature:- 55 C
DatasheetSize
STGF14NC60KD.pdf520.75 KB