| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | WSON-6 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 20 V |
| Id – Continuous Drain Current: | 20 A |
| Rds On – Drain-Source Resistance: | 23.9 mOhms |
| Vgs – Gate-Source Voltage: | – 8 V, 8 V |
| Vgs th – Gate-Source Threshold Voltage: | 550 mV |
| Qg – Gate Charge: | 3.6 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 2.9 W |
| Channel Mode: | Enhancement |
| Brand: | Texas Instruments |
| Configuration: | Single |
| Fall Time: | 5 ns |
| Rise Time: | 15 ns |
| Transistor Type: | 1 P-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Unit Weight: | 0.000208 oz |
CSD25310Q2 TI WSON-6 P-CHAN. MOSFET
Rp12.000
MOSFETs 20-V P-CH NexFET Pwr MOSFET
Stok 98
SKU: 15101952-L58.08
Kategori: Uncategorized


