IRF640N TO-220
Rp9.500
MOSFETs MOSFT 200V 18A 150mOhm 44.7nC
40 in stock
| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 200 V |
| Id – Continuous Drain Current: | 18 A |
| Rds On – Drain-Source Resistance: | 150 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 44.7 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 150 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 5.5 ns |
| Forward Transconductance – Min: | 6.8 S |
| Rise Time: | 19 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Unit Weight: | 0.068784 oz |
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