IRF6643TRPBF IR HEXFET
Rp90.000
MOSFETs 150V 1 N-CH HEXFET 34.5mOhms 39nC
7 in stock
| Manufacturer: | International Rectifier |
| Product Category: | MOSFET |
| RoHS: | Yes |
| Id – Continuous Drain Current: | 6.2 A |
| Vds – Drain-Source Breakdown Voltage: | 150 V |
| Rds On – Drain-Source Resistance: | 29 mOhms |
| Transistor Polarity: | N-Channel |
| Vgs – Gate-Source Breakdown Voltage: | 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 39 nC |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 89 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | DirectFET-3 |
| Packaging: | Reel |
| Brand: | International Rectifier |
| Channel Mode: | Enhancement |
| Ciss – Input Capacitance: | 2.34 nF |
| Configuration: | Single |
| Fall Time: | 4.4 ns |
| Forward Transconductance – Min: | 16 S |
| Minimum Operating Temperature: | – 40 C |
| Rise Time: | 5 ns |
| Typical Turn-Off Delay Time: | 13 ns |
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