| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 (TO-263-3) |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 75 V |
| Id – Continuous Drain Current: | 89 A |
| Rds On – Drain-Source Resistance: | 9.4 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 71 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 170 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 45 ns |
| Forward Transconductance – Min: | 67 S |
| Rise Time: | 79 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Unit Weight: | 0.139332 oz |
IRF2807ZSPBF INFINEON TO-263-3
Rp65.000
MOSFETs 75V 1 N-CH HEXFET 9.4mOhms 71nC
25 in stock
SKU: 15100507-L50.24
Categories: MOSFET, Semiconductor, Transistor


