| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 200 V |
| Id – Continuous Drain Current: | 44 A |
| Rds On – Drain-Source Resistance: | 55 mOhms |
| Vgs – Gate-Source Voltage: | – 30 V, 30 V |
| Vgs th – Gate-Source Threshold Voltage: | 5.5 V |
| Qg – Gate Charge: | 91 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 2.4 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 32 ns |
| Forward Transconductance – Min: | 21 S |
| Rise Time: | 69 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Unit Weight: | 2 g |
IRFB42N20DPBF IR TO-220
Rp75.000
MOSFETs 200V SINGLE N-CH 55mOhms 91nC
16 in stock
SKU: 15997-L30.8
Categories: MOSFET, Semiconductor, Transistor




