| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 200 V |
| Id – Continuous Drain Current: | 50 A |
| Rds On – Drain-Source Resistance: | 40 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 1.8 V |
| Qg – Gate Charge: | 156 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 300 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 48 ns |
| Forward Transconductance – Min: | 27 S |
| Rise Time: | 60 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 55 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Unit Weight: | 0.211644 oz |
IRFP260NPBF INFINEON TO-247
Rp28.000
MOSFETs MOSFT 200V 49A 40mOhm 156nCAC
SKU: 17855
Categories: MOSFET, Semiconductor, Transistor


