2SA1298-Y TOSHIBA TO-236
Rp12.500
Bipolar Transistors – BJT Bias Resistor Built-in transistor
| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-236MOD-3 |
| Transistor Polarity: | PNP |
| Configuration: | Single |
| Maximum DC Collector Current: | 800 mA |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector- Base Voltage VCBO: | 30 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Pd – Power Dissipation: | 200 mW |
| Gain Bandwidth Product fT: | 120 MHz |
| Maximum Operating Temperature: | + 150 C |
| Brand: | Toshiba |
| Continuous Collector Current: | – 800 mA |
| DC Collector/Base Gain hfe Min: | 40 |
| DC Current Gain hFE Max: | 320 |
| Unit Weight: | 0.000423 oz |
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