| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-251-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 60 V |
| Id – Continuous Drain Current: | 12 A |
| Rds On – Drain-Source Resistance: | 100 mOhms |
| Vgs – Gate-Source Voltage: | – 16 V, 16 V |
| Vgs th – Gate-Source Threshold Voltage: | 1 V |
| Qg – Gate Charge: | 10 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 30 W |
| Channel Mode: | Enhancement |
| Brand: | STMicroelectronics |
| Configuration: | Single |
| Fall Time: | 13 ns |
| Forward Transconductance – Min: | 7 S |
| Rise Time: | 35 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Unit Weight: | 0.011993 oz |


