| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 60 V |
| Id – Continuous Drain Current: | 2.6 A |
| Rds On – Drain-Source Resistance: | 120 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 1.6 V |
| Qg – Gate Charge: | 14 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 1.8 W |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 15 ns |
| Forward Transconductance – Min: | 2.4 S |
| Rise Time: | 15 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Unit Weight: | 0.003951 oz |
BSP318SH6327 INFINEON SOT-223
Rp28.000
MOSFETs N-Ch 60V 2.6A SOT-223-3
Stok 50
SKU: 16993-L62.22
Kategori: Transistor


