| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | WSON-6 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 12 V |
| Id – Continuous Drain Current: | 14.4 A |
| Rds On – Drain-Source Resistance: | 9.3 mOhms |
| Vgs – Gate-Source Voltage: | – 8 V, 8 V |
| Vgs th – Gate-Source Threshold Voltage: | 580 mV |
| Qg – Gate Charge: | 5.1 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 2.7 W |
| Channel Mode: | Enhancement |
| Brand: | Texas Instruments |
| Configuration: | Single |
| Fall Time: | 13.6 ns |
| Forward Transconductance – Min: | 44 S |
| Rise Time: | 28 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 4.5 ns |
| Unit Weight: | 0.000208 oz |
CSD13202Q2 TI WSON-6 P-CHAN. MOSFET
Rp12.000
MOSFETs N-CH Power MOSFET 12 V 9.3mohm
Stok 98
SKU: 15101951-L58.06
Kategori: Uncategorized


