| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC59-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 12 V |
| Id – Continuous Drain Current: | 9.3 A |
| Rds On – Drain-Source Resistance: | 10 mOhms |
| Vgs – Gate-Source Voltage: | – 8 V, 8 V |
| Vgs th – Gate-Source Threshold Voltage: | 350 mV |
| Qg – Gate Charge: | 27.3 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 1.2 W |
| Brand: | Diodes Incorporated |
| Fall Time: | 16.8 ns |
| Rise Time: | 57.6 ns |
| Typical Turn-Off Delay Time: | 22.2 ns |
| Typical Turn-On Delay Time: | 7.6 ns |
| Unit Weight: | 0.000282 oz |
DMN1019USN-7
Rp11.000
MOSFETs 12V N-Ch Enh FET 2426pF 27.3nC
Stok 102
SKU: 15101964-L58.04
Kategori: Uncategorized


