| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 4.5 A |
| Rds On – Drain-Source Resistance: | 50 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 15 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 2.5 W |
| Channel Mode: | Enhancement |
| Brand: | onsemi |
| Configuration: | Single |
| Fall Time: | 26 ns |
| Rise Time: | 26 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 34 ns |
| Typical Turn-On Delay Time: | 9.8 ns |
| Unit Weight: | 0.004586 oz |


