| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 57 A |
| Rds On – Drain-Source Resistance: | 23 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 86.7 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 200 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Unit Weight: | 2 g |
IRF3710PBF INFINEON TO-220
Rp10.500
MOSFETs MOSFT 100V 57A 23mOhm 86.7nC
30 in stock
SKU: 15995-L30.20
Categories: MOSFET, Semiconductor, Transistor




