| Part Number | : | IRF840 |
| Brand | : | VISHAY |
| RoHS | : | Yes |
| FET Type | : | MOSFET N-Channel, Metal Oxide |
| FET Feature | : | Standard |
| Drain to Source Voltage (Vdss) | : | 500V |
| Current – Continuous Drain (Id) @ 25°C | : | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | : | 850 mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | : | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | : | 63nC @ 10V |
| Input Capacitance (Ciss) @ Vds | : | 1300pF @ 25V |
| Power – Max | : | 125W |
| Mounting Type | : | Through Hole |
| Package / Case | : | TO-220-3 |
IRF840 VISHAY TO-220
Rp17.500
IRF840
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to pproximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry
80 in stock


