| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | DPAK-3 (TO-252-3) |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 56 A |
| Rds On – Drain-Source Resistance: | 18 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 100 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 140 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 42 ns |
| Forward Transconductance – Min: | 39 S |
| Rise Time: | 43 ns |
| Transistor Type: | 1 N-Channel |
| Unit Weight: | 330 mg |
IRFR3710Z IR TO-252
Rp22.500
MOSFETs MOSFT 100V 56A 18mOhm 69nC Qg
30 in stock
SKU: 15101956-L44.33
Categories: MOSFET, Semiconductor, Transistor


