| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | D2PAK-3 (TO-263-3) |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 40 A |
| Rds On – Drain-Source Resistance: | 60 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 120 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 3.8 W |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Transistor Type: | 1 P-Channel |
MOSFET IRF5210STRLPBF IR D2PAK P-CH 100V/38A
Rp70.000
MOSFETs MOSFT PCh -100V -0.4A 60mOhm 120nC
Stok 10


