MOSFET IRFD110PBF IR DIP-4

Name: MOSFET IRFD110PBF IR DIP-4 - RDD Technologies
SKU: 36101028-L22.22
Price: 14500 IDR
Availability: OutOfStock

Rp14.500

IRFD110PBF
MOSFET 100V Single N-Channel HEXFET

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SKU: 36101028-L22.22 Kategori: MOSFET

Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Yes
Brand:	Vishay Semiconductors
Id – Continuous Drain Current:	1:00 AM
Vds – Drain-Source Breakdown Voltage:	100 V
Rds On – Drain-Source Resistance:	540 mOhms
Transistor Polarity:	N-Channel
Vgs – Gate-Source Breakdown Voltage:	20 V
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	1.3 W
Mounting Style:	Through Hole
Package / Case:	HVMDIP-4
Packaging:	Tube
Channel Mode:	Enhancement
Configuration:	Single Dual Drain
Fall Time:	16 ns
Minimum Operating Temperature:	– 55 C
Rise Time:	16 ns

MOSFET IRFD110PBF IR DIP-4

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