MOSFET IRFD110PBF IR DIP-4
Rp14.500
IRFD110PBF
MOSFET 100V Single N-Channel HEXFET
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| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Yes |
| Brand: | Vishay Semiconductors |
| Id – Continuous Drain Current: | 1:00 AM |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Rds On – Drain-Source Resistance: | 540 mOhms |
| Transistor Polarity: | N-Channel |
| Vgs – Gate-Source Breakdown Voltage: | 20 V |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 1.3 W |
| Mounting Style: | Through Hole |
| Package / Case: | HVMDIP-4 |
| Packaging: | Tube |
| Channel Mode: | Enhancement |
| Configuration: | Single Dual Drain |
| Fall Time: | 16 ns |
| Minimum Operating Temperature: | – 55 C |
| Rise Time: | 16 ns |
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