| RoHS | : | Yes |
| Brand | : | STMicroelectronics |
| Configuration | : | Single |
| Transistor Polarity | : | NPN |
| Collector- Base Voltage VCBO | : | 60 V |
| Collector- Emitter Voltage VCEO Max | : | 30 V |
| Emitter- Base Voltage VEBO | : | 6 V |
| Maximum DC Collector Current | : | 0.8 A |
| Gain Bandwidth Product fT | : | 250 MHz |
| Maximum Operating Temperature | : | + 150 C |
| Mounting Style | : | Through Hole |
| Package / Case | : | TO-18 |
| Continuous Collector Current | : | 0.6 A |
| DC Collector/Base Gain hfe Min | : | 35 |
| DC Current Gain hFE Max | : | 300 |
| Maximum Power Dissipation | : | 1.8 W |
| Minimum Operating Temperature | : | – 65 C |
| Minimum Operating Temperature | : | – 55 C |
2N2222A ST TO-18
Rp13.089
2N2222A
The 2N2222A is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
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