| RoHS | Yes |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package/Case | SOT-23-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds – Drain-Source Breakdown Voltage | 20 V |
| Id – Continuous Drain Current | 4.7 A |
| Rds On – Drain-Source Resistance | 39 mOhms |
| Vgs th – Gate-Source Threshold Voltage | 400 mV |
| Vgs – Gate-Source Voltage | 4.5 V |
| Qg – Gate Charge | 19 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd – Power Dissipation | 1.25 W |
| Configuration | Single |
| Transistor Type | 1 P-Channel |
| Brand | Vishay / Siliconix |
SI2323DS-T1-E3 VISHAY SOT-23-3
Rp10.000
SI2323DS-T1-E3
MOSFET 20V 3.7A 0.039Ohm
Stok 458


