| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 55 V |
| Id – Continuous Drain Current: | 110 A |
| Rds On – Drain-Source Resistance: | 8 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 97.3 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 200 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Unit Weight: | 0.068784 oz |
IRF3205PBF INFINEON TO-220
Rp36.809
MOSFETs MOSFT 55V 98A 8mOhm 97.3nC
48 in stock
SKU: 15100484-L30.15
Categories: MOSFET, Semiconductor, Transistor


