| RoHS: | Yes |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-252-3 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Vds – Drain-Source Breakdown Voltage: | 55 V |
| Id – Continuous Drain Current: | 36 A |
| Rds On – Drain-Source Resistance: | 40 mOhms |
| Vgs – Gate-Source Voltage: | 16 V |
| Qg – Gate Charge: | 32 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Configuration: | Single |
| Channel Mode: | Enhancement |
| Fall Time: | 15 ns |
| Height: | 2.3 mm |
| Length: | 6.5 mm |
| Pd – Power Dissipation: | 69 W |
| Rise Time: | 84 ns |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Width: | 6.22 mm |
IRLR2905PBF IR TO-252
Rp12.500
Stok 29


