2SA1298-Y TOSHIBA TO-236

Name: 2SA1298-Y TOSHIBA TO-236 - RDD Technologies
Brand: TOSHIBA
SKU: 3201141-L48.09
Price: 12500 IDR
Availability: OutOfStock

Rp12.500

Bipolar Transistors – BJT Bias Resistor Built-in transistor

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SKU: 3201141-L48.09 Kategori: BJT Brand: TOSHIBA

RoHS:	Yes
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-236MOD-3
Transistor Polarity:	PNP
Configuration:	Single
Maximum DC Collector Current:	800 mA
Collector- Emitter Voltage VCEO Max:	25 V
Collector- Base Voltage VCBO:	30 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	400 mV
Pd – Power Dissipation:	200 mW
Gain Bandwidth Product fT:	120 MHz
Maximum Operating Temperature:	+ 150 C
Brand:	Toshiba
Continuous Collector Current:	– 800 mA
DC Collector/Base Gain hfe Min:	40
DC Current Gain hFE Max:	320
Unit Weight:	0.000423 oz

2SA1298-Y TOSHIBA TO-236

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