2SA1943-O(Q) TOSHIBA TO-3

Name: 2SA1943-O(Q) TOSHIBA TO-3 - RDD Technologies
SKU: 3201105-L36.18
Price: 75000 IDR
Availability: InStock

Rp75.000

2SA1943-O(Q)
Bipolar Transistors – BJT PNP 230V 15A

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SKU: 3201105-L36.18 Kategori: BJT

RoHS:	Yes
Brand:	Toshiba
Configuration:	Single
Transistor Polarity:	PNP
Collector- Base Voltage VCBO:	230 V
Collector- Emitter Voltage VCEO Max:	230 V
Emitter- Base Voltage VEBO:	5 V
Maximum DC Collector Current:	15 A
Gain Bandwidth Product fT:	30 MHz
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Through Hole
Package / Case:	TO-3P
DC Collector/Base Gain hfe Min:	80
Maximum Power Dissipation:	150000 mW
Minimum Operating Temperature:	– 55 C

2SA1943-O(Q) TOSHIBA TO-3

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