Name: 2SK3549-01 FUJI TO-3P - RDD Technologies
Brand: FUJI ELECTRIC
SKU: 3701174-L34.06
Price: 75000 IDR
Availability: InStock

2SK3549-01 FUJI TO-3P

Rp75.000

2SK3549-01
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3

Stok 3

SKU: 3701174-L34.06 Kategori: MOSFET Brand: FUJI ELECTRIC

Application	Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Current, Drain	±40 A
Operating And Storage Temperature	-55 to 150 °C
Polarization	N-Channel
Resistance, Drain To Source On	1.08 Ohms
Temperature, Operating, Maximum	+150 °C
Time, Turn-off Delay	60 ns
Transconductance, Forward	12 S
Voltage, Diode Forward	0.90 V (Typ.)
Voltage, Forward, Diode	0.9 V
Lead Free Status / Rohs Status	RoHS Compliant part Electrostatic Device
Channel Type	N-Channel
Gate Charge, Total	34.5 nC
Package Type	TO-247
Power Dissipation	270 W
Resistance, Thermal, Junction To Case	0.463 °C⁄W (Max.)
Thermal Resistance, Junction To Ambient	50 °C⁄W
Time, Turn-on Delay	26 ns
Voltage, Breakdown, Drain To Source	900 V
Voltage, Drain To Source	900 V
Voltage, Gate To Source	±30 V