IRF640N TO-220

IRF640N TO-220

Rp9.500

MOSFETs MOSFT 200V 18A 150mOhm 44.7nC

Stok 40

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SKU: 36101070-L47.39 Kategori:
RoHS: Yes
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 18 A
Rds On – Drain-Source Resistance: 150 mOhms
Vgs – Gate-Source Voltage: – 20 V, 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 44.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Fall Time: 5.5 ns
Forward Transconductance – Min: 6.8 S
Rise Time: 19 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 0.068784 oz
IRF640N TO-220
IRF640N TO-220

Stok 40

Add to Wishlist
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